发明申请
- 专利标题: FABRICATION OF SEMICONDUCTOR STACKS WITH RUTHENIUM-BASED MATERIALS
- 专利标题(中): 用基于金属的材料制造半导体堆叠
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申请号: US13395071申请日: 2009-09-18
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公开(公告)号: US20120171839A1公开(公告)日: 2012-07-05
- 发明人: Hanhong Chen , Nobumichi Fuchigami , Imran Hashim , Pragati Kumar , Sandra Malhotra , Sunil Shanker
- 申请人: Hanhong Chen , Nobumichi Fuchigami , Imran Hashim , Pragati Kumar , Sandra Malhotra , Sunil Shanker
- 申请人地址: US CA San Jose
- 专利权人: INTERMOLECULAR INC.
- 当前专利权人: INTERMOLECULAR INC.
- 当前专利权人地址: US CA San Jose
- 国际申请: PCT/US09/57371 WO 20090918
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
This disclosure provides a method of fabricating a semiconductor stack and associated device such as a capacitor and DRAM cell. In particular, a bottom electrode upon which a dielectric layer is to be grown may have a ruthenium-based surface. Lattice matching of the ruthenium surface with the dielectric layer (e.g., titanium oxide, strontium titanate or barium strontium titanate) helps promote the growth of rutile-phase titanium oxide, thereby leading to higher dielectric constant and lower effective oxide thickness. The ruthenium-based material also provides a high work function material, leading to lower leakage. To mitigate nucleation delay associated with the use of ruthenium, an adherence or glue layer based in titanium may be employed. A pretreatment process may be further employed so as to increase effective capacitor plate area, and thus promote even further improvements in dielectric constant and effective oxide thickness (“EOT”).