发明申请
- 专利标题: STRESS-GENERATING SHALLOW TRENCH ISOLATION STRUCTURE HAVING DUAL COMPOSITION
- 专利标题(中): 应力生成具有双组分的浅层分离结构
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申请号: US13419927申请日: 2012-03-14
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公开(公告)号: US20120171842A1公开(公告)日: 2012-07-05
- 发明人: Huilong Zhu , Jing Wang
- 申请人: Huilong Zhu , Jing Wang
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/762
- IPC分类号: H01L21/762
摘要:
A shallow trench isolation structure containing a first shallow trench isolation portion comprising the first shallow trench material and a second shallow trench isolation portion comprising the second shallow trench material is provided. A first biaxial stress on at least one first active area and a second bidirectional stress on at least one second active area are manipulated separately to enhance charge carrier mobility in middle portions of the at least one first and second active areas by selection of the first and second shallow trench materials as well as adjusting the type of the shallow trench isolation material that each portion of the at least one first active area and the at least one second active area laterally abut.
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