发明申请
US20120171851A1 Patterned Substrate for Hetero-epitaxial Growth of Group-III Nitride Film
有权
用于III族氮化物膜的异质外延生长的图案化基板
- 专利标题： Patterned Substrate for Hetero-epitaxial Growth of Group-III Nitride Film
- 专利标题（中）： 用于III族氮化物膜的异质外延生长的图案化基板
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申请号： US13418098申请日： 2012-03-12
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公开(公告)号： US20120171851A1公开(公告)日： 2012-07-05
- 发明人: Chen-Hua Yu , Ding-Yuan Chen
- 申请人： Chen-Hua Yu , Ding-Yuan Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.
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