发明申请
US20120175023A1 SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES
有权
用于Cu互连结构的自对准复合材料M-MOx /电介质盖
- 专利标题： SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES
- 专利标题（中）： 用于Cu互连结构的自对准复合材料M-MOx /电介质盖
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申请号： US13420728申请日： 2012-03-15
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公开(公告)号： US20120175023A1公开(公告)日： 2012-07-12
- 发明人: Son Van Nguyen , Alfred Grill , Thomas J. Haigh, JR. , Hosadurga Shobha , Tuan A. Vo
- 申请人： Son Van Nguyen , Alfred Grill , Thomas J. Haigh, JR. , Hosadurga Shobha , Tuan A. Vo
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： C23C8/00
- IPC分类号： C23C8/00 ; C23C28/04
摘要：
An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.
公开/授权文献
- US09502288B2 Method of forming an interconnect structure 公开/授权日：2016-11-22
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