发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12986225申请日： 2011-01-07
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公开(公告)号： US20120175727A1公开(公告)日： 2012-07-12
- 发明人: Geeng-Lih Lin , Kwang-Ming Lin , Shang-Hui Tu , Jui-Chun Chang
- 申请人： Geeng-Lih Lin , Kwang-Ming Lin , Shang-Hui Tu , Jui-Chun Chang
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/283
摘要：
The invention provides a semiconductor device. A buried layer is formed in a substrate. A first deep trench contact structure is formed in the substrate. The first deep trench contact structure comprises a conductor and a liner layer formed on a sidewall of the conductor. A bottom surface of the first deep trench contact structure is in contact with the buried layer.
公开/授权文献
- US08921202B2 Semiconductor device and fabrication method thereof 公开/授权日：2014-12-30