发明申请
- 专利标题： BASE SUBSTRATE, GROUP 3B NITRIDE CRYSTAL, AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 基底衬底，3B族氮化物晶体及其制造方法
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申请号： US13496982申请日： 2010-10-15
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公开(公告)号： US20120175740A1公开(公告)日： 2012-07-12
- 发明人: Takayuki Hirao , Takanao Shimodaira , Katsuhiro Imai
- 申请人： Takayuki Hirao , Takanao Shimodaira , Katsuhiro Imai
- 优先权： JP2009-239567 20091016
- 国际申请： PCT/JP2010/068166 WO 20101015
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/208
摘要：
Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.
公开/授权文献
- US09290861B2 Group 13 nitride crystal with stepped surface 公开/授权日：2016-03-22
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