发明申请
- 专利标题: NANOWIRE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 纳米存储器件及其制造方法
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申请号: US13425807申请日: 2012-03-21
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公开(公告)号: US20120178233A1公开(公告)日: 2012-07-12
- 发明人: Jin-gyoo YOO , Cheol-soon KIM , Jung-hoon LEE
- 申请人: Jin-gyoo YOO , Cheol-soon KIM , Jung-hoon LEE
- 申请人地址: KR Seoul KR Suwon-si
- 专利权人: SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION,SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION,SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Seoul KR Suwon-si
- 优先权: KR1020060021874 20060308
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; B82Y40/00
摘要:
A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.
公开/授权文献
- US08293654B2 Nanowire memory device and method of manufacturing the same 公开/授权日:2012-10-23