发明申请
- 专利标题: FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- 专利标题(中): 柔性半导体器件及其制造方法
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申请号: US13498700申请日: 2011-04-14
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公开(公告)号: US20120181543A1公开(公告)日: 2012-07-19
- 发明人: Takashi Ichiryu , Seiichi Nakatani , Koichi Hirano
- 申请人: Takashi Ichiryu , Seiichi Nakatani , Koichi Hirano
- 优先权: JP2010-109837 20100512
- 国际申请: PCT/JP2011/002203 WO 20110414
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336 ; H01L21/50 ; H01L27/06
摘要:
Disclosed are a flexible semiconductor device and manufacturing method therefor whereby the capacitances of capacitor parts of semiconductor elements and the like can be increased while decreasing parasitic capacitances that arise between multilevel interconnections. The disclosed flexible semiconductor device is provided with an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element comprises: a semiconductor layer formed on the top surface of the insulating film; a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer; and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulting film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.