发明申请
- 专利标题： REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT
- 专利标题（中）： 具有降低闸门泄漏电流的更换门
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申请号： US13006656申请日： 2011-01-14
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公开(公告)号： US20120181630A1公开(公告)日： 2012-07-19
- 发明人: Takashi Ando , Michael P. Chudzik , Rishikesh Krishnan , Siddarth A. Krishnan , Unoh Kwon , Keith Kwong Hon Wong
- 申请人： Takashi Ando , Michael P. Chudzik , Rishikesh Krishnan , Siddarth A. Krishnan , Unoh Kwon , Keith Kwong Hon Wong
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
Replacement gate work function material stacks are provided, which provides a work function about the energy level of the conduction band of silicon. After removal of a disposable gate stack, a gate dielectric layer is formed in a gate cavity. A metallic compound layer including a metal and a non-metal element is deposited directly on the gate dielectric layer. At least one barrier layer and a conductive material layer is deposited and planarized to fill the gate cavity. The metallic compound layer includes a material having a work function about 4.4 eV or less, and can include a material selected from tantalum carbide and a hafnium-silicon alloy. Thus, the metallic compound layer can provide a work function that enhances the performance of an n-type field effect transistor employing a silicon channel.
公开/授权文献
- US08581351B2 Replacement gate with reduced gate leakage current 公开/授权日：2013-11-12
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