发明申请
US20120182795A1 EMULATION OF STATIC RANDOM ACCESS MEMORY (SRAM) BY MAGNETIC RANDOM ACCESS MEMORY (MRAM)
有权
通过磁性随机存取存储器（MRAM）对静态随机存取存储器（SRAM）进行仿真
- 专利标题： EMULATION OF STATIC RANDOM ACCESS MEMORY (SRAM) BY MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- 专利标题（中）： 通过磁性随机存取存储器（MRAM）对静态随机存取存储器（SRAM）进行仿真
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申请号： US13187402申请日： 2011-07-20
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公开(公告)号： US20120182795A1公开(公告)日： 2012-07-19
- 发明人: Petro Estakhri , Ebrahim Abedifard , Frederick Jaffin , Siamack Nemazie
- 申请人： Petro Estakhri , Ebrahim Abedifard , Frederick Jaffin , Siamack Nemazie
- 申请人地址： US CA Fremont
- 专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人地址： US CA Fremont
- 主分类号： G11C11/02
- IPC分类号： G11C11/02
摘要：
A magnetic memory system includes a magnetic random access memory (MRAM) including a plurality of magnetic memory banks and operative to store data during a write operation initiated by a write command. The magnetic memory system further includes a first-in-first-out (FIFO) interface device coupled to the MRAM and including a plurality of FIFOs Each of the magnetic memory banks is coupled to a respective one of the plurality of FIFOs, the FIFO being operative to queue write commands on a per magnetic memory bank basis and further operative to issue the queued write commands at a time when the MRAM is not in use, wherein concurrent write operations are performed to at least two of the plurality of magnetic memory banks.