发明申请
- 专利标题： INSULATING LAYERS ON DIFFERENT SEMICONDUCTOR MATERIALS
- 专利标题（中）： 在不同的半导体材料上绝缘层
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申请号： US13431537申请日： 2012-03-27
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公开(公告)号： US20120187453A1公开(公告)日： 2012-07-26
- 发明人: Joseph F. Shepard, JR. , Siddarth A. Krishnan , Rishikesh Krishnan , Michael P. Chudzik
- 申请人： Joseph F. Shepard, JR. , Siddarth A. Krishnan , Rishikesh Krishnan , Michael P. Chudzik
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/092
- IPC分类号： H01L27/092
摘要：
A semiconductor structure is provided that includes a substrate having disposed thereon a silicon layer and a silicon germanium layer. An insulator is disposed between the silicon layer and the silicon germanium layer. An optional silicon nitride film is disposed conformally on the silicon layer and the silicon germanium layer, and a SiO2layer disposed on the optional silicon nitride film or on the silicon layer and the silicon germanium layer, when the optional silicon nitride film is not present.
公开/授权文献
- US2153307A Tile making machine 公开/授权日：1939-04-04