发明申请
US20120187490A1 FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEAKAGE AND BODY RESISTANCE
有权
具有TRENCH植入的FET结构以提高反向通道泄漏和体电阻
- 专利标题： FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEAKAGE AND BODY RESISTANCE
- 专利标题（中）： 具有TRENCH植入的FET结构以提高反向通道泄漏和体电阻
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申请号： US13426547申请日： 2012-03-21
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公开(公告)号： US20120187490A1公开(公告)日： 2012-07-26
- 发明人: David M. Fried , Jeffrey B. Johnson , Kevin McStay , Paul C. Parries , Chengwen Pei , Gan Wang , Geng Wang , Yanli Zhang
- 申请人： David M. Fried , Jeffrey B. Johnson , Kevin McStay , Paul C. Parries , Chengwen Pei , Gan Wang , Geng Wang , Yanli Zhang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A field effect transistor (FET) structure on a semiconductor substrate which includes a gate structure having a spacer on a semiconductor substrate; an extension implant underneath the gate structure; a recessed source and a recessed drain filled with a doped epitaxial material; halo implanted regions adjacent a bottom of the recessed source and drain and being underneath the gate stack. In an exemplary embodiment, there is implanted junction butting underneath the bottom of each of the recessed source and drain, the junction butting being separate and distinct from the halo implanted regions. In another exemplary embodiment, the doped epitaxial material is graded from a lower dopant concentration at a side of the recessed source and drain to a higher dopant concentration at a center of the recessed source and drain. In a further exemplary embodiment, the semiconductor substrate is a semiconductor on insulator substrate.