发明申请
- 专利标题： PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP PROCESSES THAT INVOLVE DISPROPORTIONATION OPERATIONS
- 专利标题（中）： 在涉及分解操作的大型封闭式循环过程中生产多晶硅
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申请号： US13328029申请日： 2011-12-16
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公开(公告)号： US20120189527A1公开(公告)日： 2012-07-26
- 发明人: Puneet Gupta , Yue Huang , Satish Bhusarapu
- 申请人： Puneet Gupta , Yue Huang , Satish Bhusarapu
- 申请人地址： US MO St. Peters
- 专利权人： MEMC ELECTRONIC MATERIALS, INC.
- 当前专利权人： MEMC ELECTRONIC MATERIALS, INC.
- 当前专利权人地址： US MO St. Peters
- 主分类号： C01B33/021
- IPC分类号： C01B33/021
摘要：
Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
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