发明申请
- 专利标题： DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS
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申请号： US13440495申请日： 2012-04-05
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公开(公告)号： US20120190182A1公开(公告)日： 2012-07-26
- 发明人: JIPING LI , Aaron Muir Hunter , Bruce E. Adams , Theodore P. Moffitt , Stephen Moffatt
- 申请人： JIPING LI , Aaron Muir Hunter , Bruce E. Adams , Theodore P. Moffitt , Stephen Moffatt
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
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