发明申请
- 专利标题: OPTICAL PROXIMITY CORRECTION VERIFICATION ACCOUNTING FOR MASK DEVIATIONS
- 专利标题(中): 用于掩蔽偏差的光学近似校正验证会计
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申请号: US13014159申请日: 2011-01-26
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公开(公告)号: US20120192124A1公开(公告)日: 2012-07-26
- 发明人: JAMES A. BRUCE , KENNETH T. SETTLEMYER, JR.
- 申请人: JAMES A. BRUCE , KENNETH T. SETTLEMYER, JR.
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
Solutions for accounting for photomask deviations in a lithographic process during optical proximity correction verification are disclosed. In one embodiment, a method includes: identifying a wafer control structure in a data set representing one of a first chip or a kerf; biasing the data set representing the first chip in the case that the wafer control structure is in the data set representing the first chip; biasing the data set representing the kerf or a second chip distinct from the first chip, in the case that the wafer control structure is in the data set representing the kerf or the second chip; simulating formation of the wafer control structure; determining whether the simulated wafer control structure complies with a target control structure; and iteratively adjusting an exposure dose condition in the case that the simulated wafer control structure does not comply with the target control structure.