发明申请
US20120194966A1 Systems and Methods for a Thin Film Capacitor Having a Composite High-K Thin Film Stack
有权
具有复合高K薄膜堆叠的薄膜电容器的系统和方法
- 专利标题： Systems and Methods for a Thin Film Capacitor Having a Composite High-K Thin Film Stack
- 专利标题（中）： 具有复合高K薄膜堆叠的薄膜电容器的系统和方法
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申请号： US13435392申请日： 2012-03-30
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公开(公告)号： US20120194966A1公开(公告)日： 2012-08-02
- 发明人: Marina Zelner , Mircea Capanu , Susan C. Nagy
- 申请人： Marina Zelner , Mircea Capanu , Susan C. Nagy
- 申请人地址： US NH Nashua
- 专利权人： PARATEK MICROWAVE, INC.
- 当前专利权人： PARATEK MICROWAVE, INC.
- 当前专利权人地址： US NH Nashua
- 主分类号： H01G4/33
- IPC分类号： H01G4/33 ; B05D5/12
摘要：
Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrat e material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.