发明申请
- 专利标题： RESIST PATTERN FORMING PROCESS
- 专利标题（中）： 电阻图案形成过程
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申请号： US13362294申请日： 2012-01-31
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公开(公告)号： US20120196211A1公开(公告)日： 2012-08-02
- 发明人: Keiichi Masunaga , Takeru Watanabe , Satoshi Watanabe , Daisuke Domon
- 申请人： Keiichi Masunaga , Takeru Watanabe , Satoshi Watanabe , Daisuke Domon
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-017840 20110131
- 主分类号： G03F1/76
- IPC分类号： G03F1/76
摘要：
A resist pattern is formed by coating a chemically amplified positive resist composition onto a substrate and prebaking to form a resist film, exposing to high-energy radiation, baking and developing with a developer to form a resist pattern, and heating the pattern for profile correction to such an extent that the line width may not undergo a change of at least 10%. An amount of a softening accelerator having a molecular weight of up to 800 is added to the resist composition comprising (A) a base resin, (B) an acid generator, (C) a nitrogen-containing compound, and (D) an organic solvent.
公开/授权文献
- US08685629B2 Resist pattern forming process 公开/授权日：2014-04-01