发明申请
- 专利标题: METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP
- 专利标题(中): 制造半导体照明芯片的方法
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申请号: US13231715申请日: 2011-09-13
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公开(公告)号: US20120196391A1公开(公告)日: 2012-08-02
- 发明人: PO-MIN TU , SHIH-CHENG HUANG , YA-WEN LIN
- 申请人: PO-MIN TU , SHIH-CHENG HUANG , YA-WEN LIN
- 申请人地址: TW Hsinchu Hsien
- 专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人地址: TW Hsinchu Hsien
- 优先权: CN201110028114.3 20110128
- 主分类号: H01L33/20
- IPC分类号: H01L33/20 ; B82Y40/00
摘要:
A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer.
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