发明申请
- 专利标题： SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULATING EPITAXY
- 专利标题（中）： 半导体封装和相关宽带晶体管半绝缘外延
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申请号： US13449502申请日： 2012-04-18
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公开(公告)号： US20120199940A1公开(公告)日： 2012-08-09
- 发明人: Michael S. MAZZOLA
- 申请人： Michael S. MAZZOLA
- 申请人地址： US MS Jackson
- 专利权人： SS SC IP, LLC
- 当前专利权人： SS SC IP, LLC
- 当前专利权人地址： US MS Jackson
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/762
摘要：
A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.
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