发明申请
- 专利标题： SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND DATA PROCESSING DEVICE
- 专利标题（中）： 半导体器件，其制造方法和数据处理器件
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申请号： US13408318申请日： 2012-02-29
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公开(公告)号： US20120199984A1公开(公告)日： 2012-08-09
- 发明人: Osamu FUJITA , Yuki TOGASHI
- 申请人： Osamu FUJITA , Yuki TOGASHI
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-206858 20100915
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L21/768
摘要：
A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.
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