发明申请
US20120200345A1 INTEGRATED CIRCUIT HAVING POWER GATING FUNCTION AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 审中-公开
具有功率增益功能的集成电路和包括其的半导体器件

  • 专利标题: INTEGRATED CIRCUIT HAVING POWER GATING FUNCTION AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
  • 专利标题(中): 具有功率增益功能的集成电路和包括其的半导体器件
  • 申请号: US13367411
    申请日: 2012-02-07
  • 公开(公告)号: US20120200345A1
    公开(公告)日: 2012-08-09
  • 发明人: Jung-Sik KIM
  • 申请人: Jung-Sik KIM
  • 申请人地址: KR SUWON-SI
  • 专利权人: SAMSUNG ELECTRONICS CO., LTD.
  • 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
  • 当前专利权人地址: KR SUWON-SI
  • 优先权: KR10-2011-0010983 20110208
  • 主分类号: G05F3/02
  • IPC分类号: G05F3/02
INTEGRATED CIRCUIT HAVING POWER GATING FUNCTION AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要:
An integrated circuit includes a logic circuit and a power gating circuit. The logic circuit generates an output signal based on an input signal and a first power supply voltage in a normal operation mode, and maintains a voltage level of the output signal as a stand-by logic level based on a second power supply voltage in a stand-by mode. A magnitude of the second power supply voltage is smaller than a magnitude of the first power supply voltage. The power gating circuit entirely applies the first power supply voltage to the logic circuit based on a power gating signal in the normal operation mode, and partially applies the second power supply voltage to the logic circuit based on the power gating signal in the stand-by mode.
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