发明申请
- 专利标题: CLEANING PROCESS FOR SEMICONDUCTOR DEVICE FABRICATION
- 专利标题(中): 用于半导体器件制造的清洁工艺
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申请号: US13022931申请日: 2011-02-08
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公开(公告)号: US20120202156A1公开(公告)日: 2012-08-09
- 发明人: Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人: Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A method of making an integrated circuit is provided. The method includes providing a substrate having a photosensitive layer. The photosensitive layer is exposed to a radiation beam. The exposed photosensitive layer is developed in a first chamber. In the first chamber, a cleaning process is performed on the developed photosensitive layer. The cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid.
公开/授权文献
- US08518634B2 Cleaning process for semiconductor device fabrication 公开/授权日:2013-08-27