发明申请
US20120202156A1 CLEANING PROCESS FOR SEMICONDUCTOR DEVICE FABRICATION 有权
用于半导体器件制造的清洁工艺

CLEANING PROCESS FOR SEMICONDUCTOR DEVICE FABRICATION
摘要:
A method of making an integrated circuit is provided. The method includes providing a substrate having a photosensitive layer. The photosensitive layer is exposed to a radiation beam. The exposed photosensitive layer is developed in a first chamber. In the first chamber, a cleaning process is performed on the developed photosensitive layer. The cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid.
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