发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13450329申请日： 2012-04-18
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公开(公告)号： US20120202342A1公开(公告)日： 2012-08-09
- 发明人: Kouji NAKAJIMA
- 申请人： Kouji NAKAJIMA
- 申请人地址： JP KAWASAKI-SHI
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP KAWASAKI-SHI
- 优先权： JP267840/2008 20081016; JP138631/2009 20090609
- 主分类号： H01L21/283
- IPC分类号： H01L21/283
摘要：
A method of manufacturing a semiconductor device includes depositing a wiring metal layer on a photoresist layer and a portion of a first layer of a gate lead-out electrode which is exposed via an opening, lifting-off a wiring metal layer formed on the photoresist layer forming an interlayer insulation film over the entire surface including the first layer and the wiring metal layer, selectively removing the interlayer insulation film thereby forming a contact via reaching a source region formed in a cell region, and forming a source electrode on the interlayer insulation film and electrically connecting a source electrode with the source region.
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