发明申请
US20120205737A1 SHIELDED GATE TRENCH MOSFET DEVICE AND FABRICATION
有权
SHIELDED GATE TRENCH MOSFET器件和制造
- 专利标题： SHIELDED GATE TRENCH MOSFET DEVICE AND FABRICATION
- 专利标题（中）： SHIELDED GATE TRENCH MOSFET器件和制造
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申请号： US13456406申请日： 2012-04-26
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公开(公告)号： US20120205737A1公开(公告)日： 2012-08-16
- 发明人: John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- 申请人： John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- 申请人地址： US CA Sunnyvale
- 专利权人： ALPHA AND OMEGA SEMICONDUCTOR INC
- 当前专利权人： ALPHA AND OMEGA SEMICONDUCTOR INC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner trench comprising a second top gate electrode and a second bottom source electrode. The second top gate electrode is narrower than the second bottom source electrode.
公开/授权文献
- US08564055B2 Shielded gate trench MOSFET device and fabrication 公开/授权日：2013-10-22
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