Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13325779Application Date: 2011-12-14
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Publication No.: US20120205789A1Publication Date: 2012-08-16
- Inventor: Masanori NATSUAKI , Seiji Ueno , Takeshi Kodama
- Applicant: Masanori NATSUAKI , Seiji Ueno , Takeshi Kodama
- Applicant Address: JP Yokohama-shi
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama-shi
- Priority: JP2011-028815 20110214
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/56 ; H01L23/48

Abstract:
In a semiconductor device, a first semiconductor element having a first terminal is embedded in a resin layer such that terminals thereof are exposed through a first surface of the resin layer. A wiring layer is formed in the first surface of the resin layer. A second semiconductor element includes second and third terminals. Regardless of the relationship between the plane size of the first semiconductor element and that of the second semiconductor element, the second terminal of the second semiconductor element is connected to the first terminal of the first semiconductor element exposed through the first surface of the resin layer, and the third terminal of the second semiconductor element is connected to the wiring layer formed in the resin layer.
Information query
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