发明申请
US20120206068A1 HOLE FORMATION METHOD, MULTILAYER WIRING, SEMICONDUCTOR DEVICE, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM CONTAINING VIA HOLE FORMED BY THE HOLE FORMATION METHOD
有权
孔形成方法，多层布线，半导体器件，显示元件，图像显示装置和通过孔形成方法形成的孔的系统
- 专利标题： HOLE FORMATION METHOD, MULTILAYER WIRING, SEMICONDUCTOR DEVICE, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM CONTAINING VIA HOLE FORMED BY THE HOLE FORMATION METHOD
- 专利标题（中）： 孔形成方法，多层布线，半导体器件，显示元件，图像显示装置和通过孔形成方法形成的孔的系统
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申请号： US13372874申请日： 2012-02-14
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公开(公告)号： US20120206068A1公开(公告)日： 2012-08-16
- 发明人: Yuji SONE , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Kazuhiro Murata , Kazuyuki Masuda
- 申请人： Yuji SONE , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Kazuhiro Murata , Kazuyuki Masuda
- 申请人地址： JP Ibaraki JP Tokyo
- 专利权人： SIJTECHNOLOGY, INC.,RICOH COMPANY, LTD.
- 当前专利权人： SIJTECHNOLOGY, INC.,RICOH COMPANY, LTD.
- 当前专利权人地址： JP Ibaraki JP Tokyo
- 优先权： JP2011-030992 20110216; JP2012-026934 20120210
- 主分类号： H05B37/02
- IPC分类号： H05B37/02 ; B05D1/04 ; B05D3/02 ; H05K1/11 ; B05D5/00
摘要：
A hole formation method including applying a pillar-forming liquid to a base material, to thereby form a pillar; applying an insulating film-forming material to the base material on which the pillar has been formed, to thereby form an insulating film; removing the pillar to form an opening in the insulating film; and heat treating the insulating film in which the opening has been formed.
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