发明申请
- 专利标题: CHEMICAL-MECHANICAL POLISHING LIQUID, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND POLISHING METHOD USING SAID POLISHING LIQUID
- 专利标题(中): 化学机械抛光液和半导体基板制造方法和使用抛光液的抛光方法
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申请号: US13504738申请日: 2010-09-14
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公开(公告)号: US20120214307A1公开(公告)日: 2012-08-23
- 发明人: Shigeru Yoshikawa , Toshiaki Akutsu , Masato Fukusawa
- 申请人: Shigeru Yoshikawa , Toshiaki Akutsu , Masato Fukusawa
- 申请人地址: JP Tokyo
- 专利权人: HITACHI CHEMICAL COMPANY, LTD.
- 当前专利权人: HITACHI CHEMICAL COMPANY, LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JPP2009-259264 20091112
- 国际申请: PCT/JP2010/065863 WO 20100914
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; C09K13/00 ; B24B1/00
摘要:
The first embodiment of the CMP polishing liquid of the invention comprises cerium oxide particles, an organic compound with an acetylene bond, and water, the content of the organic compound with an acetylene bond being at least 0.00001 mass % and not greater than 0.01 mass % based on the total mass of the CMP polishing liquid. The second embodiment of the CMP polishing liquid of the invention comprises cerium oxide particles, an organic compound with an acetylene bond, an anionic polymer compound or salt thereof, and water, the anionic polymer compound being obtained by polymerizing a composition comprising a vinyl compound with an anionic substituent as a monomer component, the content of the organic compound with an acetylene bond being at least 0.000001 mass % and less than 0.05 mass % based on the total mass of the CMP polishing liquid.