发明申请
US20120217461A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
审中-公开
半导体存储器件及其制造方法
- 专利标题: SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体存储器件及其制造方法
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申请号: US13404795申请日: 2012-02-24
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公开(公告)号: US20120217461A1公开(公告)日: 2012-08-30
- 发明人: Shigeki KOBAYASHI , Takashi Shigeoka , Mitsuru Sato , Takahiro Hirai , Katsuyuki Sekine , Kazuya Kinoshita , Soichi Yamazaki , Ryota Fujitsuka , Kensuke Takahashi , Yasuhiro Nojiri , Masaki Yamato , Hiroyuki Fukumizu , Takeshi Yamaguchi
- 申请人: Shigeki KOBAYASHI , Takashi Shigeoka , Mitsuru Sato , Takahiro Hirai , Katsuyuki Sekine , Kazuya Kinoshita , Soichi Yamazaki , Ryota Fujitsuka , Kensuke Takahashi , Yasuhiro Nojiri , Masaki Yamato , Hiroyuki Fukumizu , Takeshi Yamaguchi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-039485 20110225; JP2012-033769 20120220
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L21/8239 ; B82Y99/00
摘要:
A semiconductor memory device according to an embodiment includes: first lines provided on a substrate; second lines provided between the first lines and the substrate so as to intersect the first lines; and a first memory cell array including first memory cells, each of the first memory cells being provided at respective intersections of the first lines and the second lines and including a current rectifying element and a variable resistor connected in series. The variable resistor of the first memory cell includes a first recording layer and a second recording layer, the first recording layer being made of an oxide of a first metal material, the second recording layer being made of the first metal material and being formed so as to contact with the first recording layer. The second recording layer is closer to the first line than the first recording layer is.