发明申请
- 专利标题: NONVOLATILE STORAGE DEVICE
- 专利标题(中): 非易失存储器件
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申请号: US13404678申请日: 2012-02-24
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公开(公告)号: US20120217464A1公开(公告)日: 2012-08-30
- 发明人: Shigeki Kobayashi , Kazuhiko Yamamoto , Kenji Aoyama , Shigeto Oshino , Kei Watanabe , Shinichi Nakao , Satoshi Ishikawa , Takeshi Yamaguchi
- 申请人: Shigeki Kobayashi , Kazuhiko Yamamoto , Kenji Aoyama , Shigeto Oshino , Kei Watanabe , Shinichi Nakao , Satoshi Ishikawa , Takeshi Yamaguchi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-042946 20110228
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.
公开/授权文献
- US08895952B2 Nonvolatile storage device 公开/授权日:2014-11-25