发明申请
- 专利标题： JUNCTION FIELD EFFECT TRANSISTOR WITH REGION OF REDUCED DOPING
- 专利标题（中）： 具有减少掺杂区域的连接场效应晶体管
-
申请号： US13468809申请日： 2012-05-10
-
公开(公告)号： US20120217551A1公开(公告)日： 2012-08-30
- 发明人: Paul Malachy Daly , Andrew David Bain , Derek Frederick Bowers , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuiness , Bernard Patrick Stenson , William Allan Lane
- 申请人： Paul Malachy Daly , Andrew David Bain , Derek Frederick Bowers , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuiness , Bernard Patrick Stenson , William Allan Lane
- 申请人地址： US MA Norwood
- 专利权人： Analog Devices, Inc.
- 当前专利权人： Analog Devices, Inc.
- 当前专利权人地址： US MA Norwood
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.
公开/授权文献
信息查询
IPC分类:
