发明申请
- 专利标题: VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
- 专利标题(中): 可变电阻存储器件及其制造方法
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申请号: US13396658申请日: 2012-02-15
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公开(公告)号: US20120220087A1公开(公告)日: 2012-08-30
- 发明人: Kiseok SUH
- 申请人: Kiseok SUH
- 申请人地址: KR SUWON-SI
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR SUWON-SI
- 优先权: KR10-2011-0016637 20110224
- 主分类号: H01L21/8239
- IPC分类号: H01L21/8239
摘要:
A variable resistance memory device includes a substrate having a cell array region and a peripheral circuit region, an epitaxial semiconductor layer on the cell array region and the peripheral circuit region, and a peripheral transistor whose channel region is constituted by the epitaxial semiconductor layer on the peripheral circuit region. The peripheral transistor is formed by forming a gate electrode structure on the epitaxial semiconductor layer, and implanting impurities into the epitaxial semiconductor layer to form a source/drain region.