发明申请
- 专利标题： SINGLE CRYSTAL SILICON PULLING DEVICE, METHOD FOR PREVENTING CONTAMINATION OF SILICON MELT, AND DEVICE FOR PREVENTING CONTAMINATION OF SILICON MELT
- 专利标题（中）： 单晶硅丝拉拔装置，防止硅熔体污染的方法，以及防止硅熔体污染的装置
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申请号： US13474268申请日： 2012-05-17
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公开(公告)号： US20120222613A1公开(公告)日： 2012-09-06
- 发明人: Makato Kamogawa , Koichi Shimomura , Yoshiyuki Suzuki , Daisuke EBI
- 申请人： Makato Kamogawa , Koichi Shimomura , Yoshiyuki Suzuki , Daisuke EBI
- 申请人地址： JP Hiratsuka-shi
- 专利权人： SUMCO TECHXIV KABUSHIKI KAISHA
- 当前专利权人： SUMCO TECHXIV KABUSHIKI KAISHA
- 当前专利权人地址： JP Hiratsuka-shi
- 优先权： JP2005-279979 20050927; JPPCT/JP2006/312791 20060627
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B15/10
摘要：
A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.
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