发明申请
- 专利标题： PROGRAMMING AND ERASURE SCHEMES FOR ANALOG MEMORY CELLS
- 专利标题（中）： 模拟记忆细胞的编程和擦除方案
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申请号： US13471484申请日： 2012-05-15
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公开(公告)号： US20120224423A1公开(公告)日： 2012-09-06
- 发明人: Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
- 申请人： Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
- 申请人地址： IL Herzliya Pituach
- 专利权人： ANOBIT TECHNOLOGIES LTD.
- 当前专利权人： ANOBIT TECHNOLOGIES LTD.
- 当前专利权人地址： IL Herzliya Pituach
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A method for data storage, in a memory that includes multiple analog memory cells, includes setting a parameter of an iterative process applied to a group of the memory cells based on one or more data values stored in at least one of the memory cells in the memory. The iterative process is performed in the group of the memory cells in accordance with the set parameter.
公开/授权文献
- US09293194B2 Programming and erasure schemes for analog memory cells 公开/授权日：2016-03-22
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