发明申请
- 专利标题： METHODS FOR PROGRAMMING A MEMORY DEVICE AND MEMORY DEVICES
- 专利标题（中）： 用于编程存储器件和存储器件的方法
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申请号： US13039778申请日： 2011-03-03
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公开(公告)号： US20120224429A1公开(公告)日： 2012-09-06
- 发明人: Violante Moschiano , Giovanni Santin
- 申请人： Violante Moschiano , Giovanni Santin
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/06
摘要：
Methods for programming memory cells and memory devices are disclosed. One such method for programming includes performing a program verify operation of a group of memory cells. A number of potential CS2 situations are detected. If the number of detected potential CS2 situations is greater than a threshold, programming compensation for a CS2 situation is used in a subsequent programming operation.
公开/授权文献
- US08369157B2 Methods for programming a memory device and memory devices 公开/授权日：2013-02-05
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