发明申请
US20120228587A1 PHOTOELECTRIC CONVERSION ELEMENT, PRODUCTION METHOD FOR A PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGE SENSOR, PRODUCTION METHOD FOR A SOLID-STATE IMAGE SENSOR, ELECTRONIC APPARATUS, PHOTOCONDUCTOR, PRODUCTION METHOD FOR A PHOTOCONDUCTOR AND MULTILAYER TRANSPARENT PHOTOELECTRIC CONVERSION ELEMENT 有权
光电转换元件,光电转换元件的制造方法,固态图像传感器,固态图像传感器的制造方法,电子设备,光电转换器,光电转换器和多层透明光电转换元件的制造方法

  • 专利标题: PHOTOELECTRIC CONVERSION ELEMENT, PRODUCTION METHOD FOR A PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGE SENSOR, PRODUCTION METHOD FOR A SOLID-STATE IMAGE SENSOR, ELECTRONIC APPARATUS, PHOTOCONDUCTOR, PRODUCTION METHOD FOR A PHOTOCONDUCTOR AND MULTILAYER TRANSPARENT PHOTOELECTRIC CONVERSION ELEMENT
  • 专利标题(中): 光电转换元件,光电转换元件的制造方法,固态图像传感器,固态图像传感器的制造方法,电子设备,光电转换器,光电转换器和多层透明光电转换元件的制造方法
  • 申请号: US13402134
    申请日: 2012-02-22
  • 公开(公告)号: US20120228587A1
    公开(公告)日: 2012-09-13
  • 发明人: Wei LuoYuichi TokitaYoshio GotoSeiji YamadaSatoshi Nakamaru
  • 申请人: Wei LuoYuichi TokitaYoshio GotoSeiji YamadaSatoshi Nakamaru
  • 申请人地址: JP Tokyo
  • 专利权人: SONY CORPORATION
  • 当前专利权人: SONY CORPORATION
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2011-048510 20110307
  • 主分类号: H01L31/0256
  • IPC分类号: H01L31/0256
PHOTOELECTRIC CONVERSION ELEMENT, PRODUCTION METHOD FOR A PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGE SENSOR, PRODUCTION METHOD FOR A SOLID-STATE IMAGE SENSOR, ELECTRONIC APPARATUS, PHOTOCONDUCTOR, PRODUCTION METHOD FOR A PHOTOCONDUCTOR AND MULTILAYER TRANSPARENT PHOTOELECTRIC CONVERSION ELEMENT
摘要:
Provided is a photoelectric conversion element including a photoconductor containing a complex of a conductive polymer and/or polymer semiconductor and a protein containing at least one dye having a long-lived excited state.
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