发明申请
- 专利标题： SCHOTTKY BARRIER DIODE
- 专利标题（中）： 肖特基二极管二极管
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申请号： US13410542申请日： 2012-03-02
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公开(公告)号： US20120228636A1公开(公告)日： 2012-09-13
- 发明人: Yusuke MAEYAMA , Ryohei Osawa , Yoshitaka Araki , Yoshiyuki Watanabe
- 申请人： Yusuke MAEYAMA , Ryohei Osawa , Yoshitaka Araki , Yoshiyuki Watanabe
- 优先权： JP2011-049621 20110307
- 主分类号： H01L29/161
- IPC分类号： H01L29/161
摘要：
A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers.
公开/授权文献
- US08937319B2 Schottky barrier diode 公开/授权日：2015-01-20
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