发明申请
US20120228677A1 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
有权
用于生产半导体器件和半导体器件的方法
- 专利标题: METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题(中): 用于生产半导体器件和半导体器件的方法
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申请号: US13414039申请日: 2012-03-07
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公开(公告)号: US20120228677A1公开(公告)日: 2012-09-13
- 发明人: Fujio Masuoka , Nozomu Harada
- 申请人: Fujio Masuoka , Nozomu Harada
- 主分类号: H01L27/06
- IPC分类号: H01L27/06 ; H01L21/8234 ; H01L21/336 ; H01L29/78 ; H01L29/06
摘要:
A method for producing a semiconductor device includes a step of forming a conductor layer and a first semiconductor layer containing a donor impurity or an acceptor impurity on a first semiconductor substrate; a step of forming a second insulating layer so as to cover the first semiconductor layer; a step of thinning the first semiconductor substrate to a predetermined thickness; a step of forming, from the first semiconductor substrate, a pillar-shaped semiconductor having a pillar-shaped structure on the first semiconductor layer; a step of forming a first semiconductor region in the pillar-shaped semiconductor by diffusing the impurity from the first semiconductor layer; and a step of forming a pixel of a solid-state imaging device with the pillar-shaped semiconductor into which the impurity has been diffused.