- 专利标题: SEMICONDUCTOR DEVICE
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申请号: US13471323申请日: 2012-05-14
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公开(公告)号: US20120228690A1公开(公告)日: 2012-09-13
- 发明人: Satoshi MAEDA , Yasushi Sekine , Tetsuya Watanabe
- 申请人: Satoshi MAEDA , Yasushi Sekine , Tetsuya Watanabe
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 优先权: JP2008-068807 20080318
- 主分类号: H01L27/06
- IPC分类号: H01L27/06
摘要:
To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.
公开/授权文献
- US08766399B2 Semiconductor device 公开/授权日:2014-07-01