发明申请
- 专利标题： THERMALLY ASSISTED MULTI-BIT MRAM
- 专利标题（中）： 热辅助多位MRAM
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申请号： US13474838申请日： 2012-05-18
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公开(公告)号： US20120230092A1公开(公告)日： 2012-09-13
- 发明人: Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
- 申请人： Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
- 申请人地址： US CA Scotts Valley
- 专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人地址： US CA Scotts Valley
- 主分类号： G11C11/15
- IPC分类号： G11C11/15
摘要：
Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.
公开/授权文献
- US08462543B2 Thermally assisted multi-bit MRAM 公开/授权日：2013-06-11
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