发明申请
- 专利标题： Method of Maintaining the State of Semiconductor Memory Having Electrically Floating Body Transistor
- 专利标题（中）： 维持具有电浮体晶体管的半导体存储器状态的方法
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申请号： US13478014申请日： 2012-05-22
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公开(公告)号： US20120230123A1公开(公告)日： 2012-09-13
- 发明人: Yuniarto Widjaja , Zvi Or-Bach
- 申请人： Yuniarto Widjaja , Zvi Or-Bach
- 主分类号： G11C7/10
- IPC分类号： G11C7/10 ; G11C11/402 ; G11C7/00
摘要：
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.