发明申请
US20120234584A1 SUBSTRATE FOR MOUNTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING SAME
有权
用于安装半导体芯片的基板及其制造方法
- 专利标题: SUBSTRATE FOR MOUNTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING SAME
- 专利标题(中): 用于安装半导体芯片的基板及其制造方法
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申请号: US13394688申请日: 2010-09-06
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公开(公告)号: US20120234584A1公开(公告)日: 2012-09-20
- 发明人: Yoshinori Ejiri , Kiyoshi Hasegawa , Takehisa Sakurai , Yoshiaki Tsubomatsu
- 申请人: Yoshinori Ejiri , Kiyoshi Hasegawa , Takehisa Sakurai , Yoshiaki Tsubomatsu
- 申请人地址: JP Tokyo
- 专利权人: HITACHI CHEMICAL COMPANY, LTD.
- 当前专利权人: HITACHI CHEMICAL COMPANY, LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JPP2009-205856 20090907
- 国际申请: PCT/JP2010/065229 WO 20100906
- 主分类号: H05K1/16
- IPC分类号: H05K1/16 ; H05K1/09
摘要:
It is an object of the invention to provide a method for producing a substrate for mounting a semiconductor chip, that can reduce bridging and allows excellent wire bondability and solder connection reliability to be obtained, even when forming fine-pitch wirings. The method for producing a substrate for mounting a semiconductor chip according to the invention comprises a resist-forming step in which a resist is formed on the first copper layer of a stack comprising an inner board with an inner layer circuit on the surface and a first copper layer formed on the inner board separated by an insulating layer at the sections other than those that are to constitute a conductor circuit, a conductor circuit-forming step in which a second copper layer is formed by electrolytic copper plating on the first copper layer to obtain a conductor circuit, a nickel layer-forming step in which a nickel layer is formed by electrolytic nickel plating on at least part of the conductor circuit, a resist removal step in which the resist is removed, an etching step in which the first copper layer is removed by etching, and a gold layer-forming step in which a gold layer is formed by electroless gold plating on at least part of the conductor circuit.
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