发明申请
- 专利标题: SEMICONDUCTOR LIGHT EMITTING DEVICE
- 专利标题(中): 半导体发光器件
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申请号: US13204082申请日: 2011-08-05
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公开(公告)号: US20120235168A1公开(公告)日: 2012-09-20
- 发明人: Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
- 申请人: Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2011-55859 20110314
- 主分类号: H01L33/40
- IPC分类号: H01L33/40
摘要:
According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.
公开/授权文献
- US09130127B2 Semiconductor light emitting device 公开/授权日:2015-09-08