发明申请
- 专利标题： SEMICONDUCTOR DEVICE INCLUDING A STRESS FILM
- 专利标题（中）： 包含应力膜的半导体器件
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申请号： US13486877申请日： 2012-06-01
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公开(公告)号： US20120238068A1公开(公告)日： 2012-09-20
- 发明人: Masafumi TSUTSUI , Hiroyuki Umimoto , Kaori Akamatsu
- 申请人： Masafumi TSUTSUI , Hiroyuki Umimoto , Kaori Akamatsu
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 优先权： JP2003-170335 20030616
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
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