发明申请
US20120239866A1 NON-VOLATILE MEMORY WITH ERROR CORRECTION FOR PAGE COPY OPERATION AND METHOD THEREOF 审中-公开
非易失性存储器,用于页面复印操作的错误校正及其方法

  • 专利标题: NON-VOLATILE MEMORY WITH ERROR CORRECTION FOR PAGE COPY OPERATION AND METHOD THEREOF
  • 专利标题(中): 非易失性存储器,用于页面复印操作的错误校正及其方法
  • 申请号: US13486387
    申请日: 2012-06-01
  • 公开(公告)号: US20120239866A1
    公开(公告)日: 2012-09-20
  • 发明人: Jin-Yub Lee
  • 申请人: Jin-Yub Lee
  • 优先权: KR2003-21114 20030403
  • 主分类号: G06F12/02
  • IPC分类号: G06F12/02
NON-VOLATILE MEMORY WITH ERROR CORRECTION FOR PAGE COPY OPERATION AND METHOD THEREOF
摘要:
The disclosure is a NAND flash memory with the function of error checking and correction during a page copy operation. The NAND flash memory is able to prohibit transcription of erroneous bits to a duplicate page from a source page. Embodiments of the inventive flash memory include a correction circuit for correcting bit errors of source data stored in a page buffer, a circuit configured to provide the source data to the correction circuit and to provide correction data to the page buffer, and a copy circuit configured to copy the source data to the page buffer, and to store the correction data in the other page from the page buffer.
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