发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13514081申请日： 2010-12-03
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公开(公告)号： US20120241750A1公开(公告)日： 2012-09-27
- 发明人: Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Yuuji Mizuno , Hinae Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
- 申请人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Yuuji Mizuno , Hinae Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2009-279826 20091209
- 国际申请： PCT/JP2010/071728 WO 20101203
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
A semiconductor device includes: a thin film transistor having a gate line (3a), a first insulating film (5), an island-shaped oxide semiconductor layer (7a), a second insulating film (9), a source line (13as), a drain electrode (13ad), and a passivation film; and a terminal portion having a first connecting portion (3c) made of the same conductive film as the gate line, a second connecting portion (13c) made of the same conductive film as the source line and the drain electrode, and a third connecting portion (19c) formed on the second connecting portion. The second connecting portion is in contact with the first connecting portion within a first opening (11c) provided in the first and second insulating films; the third connecting portion (19c) is in contact with the second connecting portion within a second opening (17c) provided in the passivation film; and the second connecting portion (13c) covers end faces of the first and second insulating films within the first opening (11c), but does not cover an end face of the passivation film (15) within the second opening (17c). As a result, the taper shape of a contact hole of the terminal portion can be controlled with a high precision.
公开/授权文献
- US08685803B2 Semiconductor device and method for producing same 公开/授权日：2014-04-01
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