发明申请
- 专利标题： EXPOSURE MASK AND METHOD FOR MANUFACTURING SAME AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 曝光掩模及其制造方法及制造半导体器件的方法
-
申请号： US13491641申请日： 2012-06-08
-
公开(公告)号： US20120244714A1公开(公告)日： 2012-09-27
- 发明人: Masamitsu Itoh
- 申请人： Masamitsu Itoh
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-025594 20090206
- 主分类号： H01L21/32
- IPC分类号： H01L21/32
摘要：
An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region.
公开/授权文献
信息查询
IPC分类:
