发明申请
- 专利标题: Storage Device and Memory Controller
- 专利标题(中): 存储设备和存储控制器
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申请号: US13512958申请日: 2010-12-01
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公开(公告)号: US20120246399A1公开(公告)日: 2012-09-27
- 发明人: Masataka Nishi , Ryo Fujita , Ryoichi Inada , Takuma Nishimura , Masahiro Shiraishi , Koji Matsuda
- 申请人: Masataka Nishi , Ryo Fujita , Ryoichi Inada , Takuma Nishimura , Masahiro Shiraishi , Koji Matsuda
- 申请人地址: JP Chiyoda-ku, Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Chiyoda-ku, Tokyo
- 优先权: JP2009-275048 20091203
- 国际申请: PCT/JP2010/071429 WO 20101201
- 主分类号: G06F12/02
- IPC分类号: G06F12/02
摘要:
Disclosed is a storage device using non-volatile semiconductor memory that achieves high performance and long life for the device. When managing the non-volatile semiconductor memory (2), physical blocks are classified into three types: scratch blocks (22), data blocks (23), and erased blocks (24). Data writing from a host device (3) is performed on the scratch blocks. When the number of empty pages within a scratch block becomes less than a predetermined number or no longer exists, the block is treated thereafter as a data block, and one of the erased blocks is newly assigned as a scratch block. If there are insufficient erased blocks, a block with relatively less valid data is selected from among the data blocks. After copying all valid data included in the block to a scratch block, the block is erased, and thus an erased block is acquired.
公开/授权文献
- US08949515B2 Storage device and memory controller 公开/授权日:2015-02-03
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