Process For Plasma Treatment Employing Ceramic-Filled Polyamideimide Composite Parts

Invention Application

US20120255854A1 Process For Plasma Treatment Employing Ceramic-Filled Polyamideimide Composite Parts 有权

Title translation: 采用陶瓷填充聚酰胺酰亚胺复合材料的等离子体处理工艺

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Patent Title: Process For Plasma Treatment Employing Ceramic-Filled Polyamideimide Composite Parts
Patent Title (中): 采用陶瓷填充聚酰胺酰亚胺复合材料的等离子体处理工艺
Application No.: US13083730

Application Date: 2011-04-11
Publication No.: US20120255854A1

Publication Date: 2012-10-11
Inventor: Scott Howard Williams , Richard William Campbell , Stephan Glander
Applicant: Scott Howard Williams , Richard William Campbell , Stephan Glander
Applicant Address: CH Lenzburg
Assignee: QUADRANT EPP AG
Current Assignee: QUADRANT EPP AG
Current Assignee Address: CH Lenzburg
Main IPC: H01L21/306
IPC: H01L21/306 ; C08G6/00 ; H05H1/48 ; C08G73/06 ; C08G75/14 ; C08G73/14 ; C08G73/10 ; C08G75/20

Process For Plasma Treatment Employing Ceramic-Filled Polyamideimide Composite Parts

Abstract:

Internal components of plasma reactors are composed of a toleratable, ceramic filled plasma-useful polymer such as a high temperature engineering thermoplastic, preferably a polyamideimide. The parts exhibit a low erosion rate upon exposure to plasma at low pressure.

Abstract(Chinese):

等离子体反应器的内部组件由耐热陶瓷填充的等离子体有效的聚合物如高温工程热塑性塑料，优选聚酰胺酰亚胺组成。这些部件在低压下暴露于等离子体时表现出低的侵蚀速率。

Public/Granted literature

US09129795B2 Process for plasma treatment employing ceramic-filled polyamideimide composite parts Public/Granted day:2015-09-08

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）