发明申请
US20120256185A1 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF, AND DISPLAY DEVICE
审中-公开
半导体器件及其制造方法和显示器件
- 专利标题： SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF, AND DISPLAY DEVICE
- 专利标题（中）： 半导体器件及其制造方法和显示器件
-
申请号： US13516512申请日： 2010-12-14
-
公开(公告)号： US20120256185A1公开(公告)日： 2012-10-11
- 发明人: Yoshinobu Nakamura
- 申请人： Yoshinobu Nakamura
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2009-289821 20091221
- 国际申请： PCT/JP2010/072437 WO 20101214
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/20 ; H01L33/08
摘要：
The semiconductor device (100A) of the present invention includes an insulating substrate (11), and a first and a second thin film transistors (10A and 10B) supported by the insulating substrate (11). The first and the second thin film transistors (10A and 10B) have respective channel regions (33a and 33b). The channel region (33a) of the first thin film transistor (10A) is formed in a first crystalline semiconductor layer (30A) having a first average grain diameter. The channel region (33b) of the second thin film transistor (10B) is formed in a second crystalline semiconductor layer (30B) having a second average grain diameter which is smaller than the first average grain diameter. The thickness of the first crystalline semiconductor layer (30A) is larger than the thickness of the second crystalline semiconductor layer (30B).
信息查询
IPC分类:
