Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13525734Application Date: 2012-06-18
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Publication No.: US20120256312A1Publication Date: 2012-10-11
- Inventor: Shinya TSUJIMOTO
- Applicant: Shinya TSUJIMOTO
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Priority: JP2010-000409 20100105
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/50
Abstract:
A semiconductor device includes a semiconductor chip, an electrode pad formed on the semiconductor chip, an underlying barrier metal formed on the electrode pad, a solder bump formed on the underlying barrier metal, and an underfill material surrounding the underlying barrier metal and the solder bump. A junction interface of the solder bump with the underlying barrier metal corresponds to an upper surface of the underlying barrier metal, and a portion of the underfill material bonded to a side surface of the solder bump and an end surface of the underlying barrier metal forms a right angle or an obtuse angle.
Public/Granted literature
- US08575749B2 Semiconductor device and method for fabricating the same Public/Granted day:2013-11-05
Information query
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